Microchip Technology, Inc. 1200V/Full bridge/IGBT modules APTGLQ150H120G-Module

Description
IGBT 4 fast Low voltage drop Low tail current Low leakage current Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 1200 VCESat (V): 2.05 Current (A) Tc=80C: 150 Silicon type: TRENCH 4 FAST Package: SP6C
Datasheet
Description
IGBT 4 fast Low voltage drop Low tail current Low leakage current Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 1200 VCESat (V): 2.05 Current (A) Tc=80C: 150 Silicon type: TRENCH 4 FAST Package: SP6C
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V/Full bridge/IGBT modules - APTGLQ150H120G-Module - Microchip Technology, Inc.
Chandler, AZ, United States
1200V/Full bridge/IGBT modules
APTGLQ150H120G-Module
1200V/Full bridge/IGBT modules APTGLQ150H120G-Module
IGBT 4 fast Low voltage drop Low tail current Low leakage current Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 1200 VCESat (V): 2.05 Current (A) Tc=80C: 150 Silicon type: TRENCH 4 FAST Package: SP6C
  • IGBT 4 fast
  • Low voltage drop
  • Low tail current
  • Low leakage current
  • Kelvin emitter for easy drive
  • Low stray inductance
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Internal thermistor for temperature monitoring (optional)
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS Compliant

Additional Features

    • Configuration: Full bridge
    • VCES (V): 1200
    • VCESat (V): 2.05
    • Current (A) Tc=80C: 150
    • Silicon type: TRENCH 4 FAST
    • Package: SP6C
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APTGLQ150H120G-Module
Product Name 1200V/Full bridge/IGBT modules
Technology IGBT
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 6-Pack - 6th-Gen V Series Model 6MBI100VX-120-50 - Fuji Electric Corp. of America
Specs
Technology IGBT
Configuration Six-Pack
Package M648
View Details
Intelligent Power Modules (IPM) - IM818-LCC - Infineon Technologies AG
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 36x23D
View Details
1200V/Phase leg/SiC Mosfet modules - MSCSM120AM042CT6LIAG-Module - Microchip Technology, Inc.
Specs
Technology MOSFET; SiC
Output Voltage 1200 volts
Output Current 394 amps
View Details
flow MNPC 0 Power Module - 10-PZ07NMA100SM-M265F58Y - Vincotech GmbH
Specs
Technology IGBT; IGBT H5
Configuration Three-level MNPC (T-Type)
Output Voltage 650 volts
View Details