Microchip Technology, Inc. Power IGBT Transistor APTGF350DA60G

Description
BOOST CHOPPER NPT IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.
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Description
BOOST CHOPPER NPT IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.
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Suppliers

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Power IGBT Transistor - APTGF350DA60G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APTGF350DA60G
Power IGBT Transistor APTGF350DA60G
BOOST CHOPPER NPT IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.

BOOST CHOPPER NPT IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.

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Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGF350DA60G
Product Name Power IGBT Transistor
Package Type SP6
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