Microchip Technology, Inc. Power IGBT Transistor APTGF25H120T3G

Description
FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration, Internal Thermistor for Temperature Monitoring. Benefits: Outstanding Performance at High Frequency Operation, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Solderable Terminals Both for Power and Signal for Easy PCB Mounting, Low Profile, Easy Paralleling Due to Positive TC of VCEsat, Each Leg Can be Easily Paralleled to Achieve a Phase Leg of Twice the Current Capability, RoHS Compliant.
Request a Quote
Description
FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration, Internal Thermistor for Temperature Monitoring. Benefits: Outstanding Performance at High Frequency Operation, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Solderable Terminals Both for Power and Signal for Easy PCB Mounting, Low Profile, Easy Paralleling Due to Positive TC of VCEsat, Each Leg Can be Easily Paralleled to Achieve a Phase Leg of Twice the Current Capability, RoHS Compliant.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

APTGF25H120T3G is a full-bridge NPT IGBT power module designed for high-frequency applications such as welding converters, switched mode power supplies, uninterruptible power supplies, and motor control. It features a 1200 V collector-emitter breakdown voltage, 25 A continuous collector current at 80°C case temperature, and switching frequencies up to 50 kHz. The module includes a Kelvin emitter for easy drive, very low stray inductance, an internal NTC thermistor for temperature monitoring, and RoHS compliance. It has a single-piece isolated SP3 package with a weight of 110 g, supports direct mounting to a heatsink, and offers a junction-to-case thermal resistance of 0.6 °C/W for the IGBT and 1.2 °C/W for the diode. The device is rated for an operating junction temperature range of -40°C to 150°C and an isolation voltage of 2500 V RMS. Reverse bias safe operating area is rated at 50 A at 1150 V and 125°C junction temperature.

Datasheet Summary
Powered by GS/AI

APTGF25H120T3G is a full-bridge NPT IGBT power module designed for high-frequency applications such as welding converters, switched mode power supplies, uninterruptible power supplies, and motor control. It features a 1200 V collector-emitter breakdown voltage, 25 A continuous collector current at 80°C case temperature, and switching frequencies up to 50 kHz. The module includes a Kelvin emitter for easy drive, very low stray inductance, an internal NTC thermistor for temperature monitoring, and RoHS compliance. It has a single-piece isolated SP3 package with a weight of 110 g, supports direct mounting to a heatsink, and offers a junction-to-case thermal resistance of 0.6 °C/W for the IGBT and 1.2 °C/W for the diode. The device is rated for an operating junction temperature range of -40°C to 150°C and an isolation voltage of 2500 V RMS. Reverse bias safe operating area is rated at 50 A at 1150 V and 125°C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APTGF25H120T3G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APTGF25H120T3G
Power IGBT Transistor APTGF25H120T3G
FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration, Internal Thermistor for Temperature Monitoring. Benefits: Outstanding Performance at High Frequency Operation, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Solderable Terminals Both for Power and Signal for Easy PCB Mounting, Low Profile, Easy Paralleling Due to Positive TC of VCEsat, Each Leg Can be Easily Paralleled to Achieve a Phase Leg of Twice the Current Capability, RoHS Compliant.

FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration, Internal Thermistor for Temperature Monitoring. Benefits: Outstanding Performance at High Frequency Operation, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Solderable Terminals Both for Power and Signal for Easy PCB Mounting, Low Profile, Easy Paralleling Due to Positive TC of VCEsat, Each Leg Can be Easily Paralleled to Achieve a Phase Leg of Twice the Current Capability, RoHS Compliant.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGF25H120T3G
Product Name Power IGBT Transistor
Package Type SP3
Unlock Full Specs
to access all available technical data