Microchip Technology, Inc. Power IGBT Transistor APTGF250A60D3G

Description
Phase leg NPT IGBT Power Module - Low voltage drop, Low tail current, Switching frequency up to 50 kHz, Soft recovery parallel diodes, Low diode VF, Low leakage current, RBSOA and SCSOA rated.
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Description
Phase leg NPT IGBT Power Module - Low voltage drop, Low tail current, Switching frequency up to 50 kHz, Soft recovery parallel diodes, Low diode VF, Low leakage current, RBSOA and SCSOA rated.
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Datasheet
Datasheet Summary
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APTGF250A60D3G is a phase leg NPT IGBT power module designed for applications such as welding converters, switched mode power supplies, uninterruptible power supplies, and motor control. It features a maximum collector-emitter voltage of 600 V and continuous collector current of 250 A at a case temperature of 80°C. The device supports switching frequencies up to 50 kHz with soft recovery parallel diodes, low diode forward voltage, and rated RBSOA and SCSOA. It has a Kelvin emitter for easy drive, direct heatsink mounting, and a maximum junction-to-case thermal resistance of 0.1 °C/W for the IGBT. The package weighs 350 g and uses M6 power connectors. It operates with a junction temperature range of -40°C to 150°C and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

APTGF250A60D3G is a phase leg NPT IGBT power module designed for applications such as welding converters, switched mode power supplies, uninterruptible power supplies, and motor control. It features a maximum collector-emitter voltage of 600 V and continuous collector current of 250 A at a case temperature of 80°C. The device supports switching frequencies up to 50 kHz with soft recovery parallel diodes, low diode forward voltage, and rated RBSOA and SCSOA. It has a Kelvin emitter for easy drive, direct heatsink mounting, and a maximum junction-to-case thermal resistance of 0.1 °C/W for the IGBT. The package weighs 350 g and uses M6 power connectors. It operates with a junction temperature range of -40°C to 150°C and is RoHS compliant.

Suppliers

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Supplier Links
Power IGBT Transistor - APTGF250A60D3G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APTGF250A60D3G
Power IGBT Transistor APTGF250A60D3G
Phase leg NPT IGBT Power Module - Low voltage drop, Low tail current, Switching frequency up to 50 kHz, Soft recovery parallel diodes, Low diode VF, Low leakage current, RBSOA and SCSOA rated.

Phase leg NPT IGBT Power Module - Low voltage drop, Low tail current, Switching frequency up to 50 kHz, Soft recovery parallel diodes, Low diode VF, Low leakage current, RBSOA and SCSOA rated.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGF250A60D3G
Product Name Power IGBT Transistor
Package Type D3
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