Microchip Technology, Inc. Power IGBT Transistor APTGF200U120DG

Description
SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.
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Description
SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.
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Suppliers

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Product
Description
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Power IGBT Transistor - APTGF200U120DG - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APTGF200U120DG
Power IGBT Transistor APTGF200U120DG
SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.

SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High Frequency Operation, Stable Temperature Behavior, Very Rugged, Direct Mounting to Heatsink (Isolated Package), Low Junction to Case Thermal Resistance, Easy Paralleling Due to Positive TC of VCEsat, Low Profile, RoHS Compliant.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGF200U120DG
Product Name Power IGBT Transistor
Package Type SP6
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