Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTCV60HM45BC20T3G

Features Q2, Q4 and Q5 CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated Q1, Q3 Trench and Field Stop IGBT3: Low voltage drop, Switching frequency up to 20 kHz, RBSOA & SCSOA rated, Low tail current SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Optimized conduction and switching losses Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile Easy paralleling due to positive TC of VCEsat RoHS compliant Applications Solar converter