Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTCV40H60CT1G

Features Q2, Q4 CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged, Fast intrinsic diode Q1, Q3 Trench and Field Stop IGBT: Low voltage drop, Switching frequency up to 20 kHz, RBSOA & SCSOA rated, Low tail current SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Solar converter