The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
Win Source Part Number: 1351947-APT85GR120B2
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package: Tube
Standard Package: 1
Power - Max: 962 W
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 340 A
Switching Energy: 6mJ (on) , 3.8mJ (off)
Input Type: Standard
Gate Charge: 660 nC
Test Condition: 600V, 85A, 4.3Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: T-MAX™
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT85GR120
Current - Collector (Ic) (Max): 170 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
Td (on/off) @ 25°C: 43ns/300ns
IGBT 1200V 170A 962W TO247
| Richardson RFPD | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT85GR120B2 | 1351947-APT85GR120B2 | APT85GR120B2 |
| Product Name | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | T-Max™ | SOT3 |
