Microchip Technology, Inc. Power IGBT Transistor APT85GR120B2

Description
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
Request a Quote Datasheet
Description
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT85GR120B2 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT85GR120B2
Power IGBT Transistor APT85GR120B2
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1351947-APT85GR120B2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1351947-APT85GR120B2
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1351947-APT85GR120B2
Win Source Part Number: 1351947-APT85GR120B2 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 1 Power - Max: 962 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 340 A Switching Energy: 6mJ (on) , 3.8mJ (off) Input Type: Standard Gate Charge: 660 nC Test Condition: 600V, 85A, 4.3Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT85GR120 Current - Collector (Ic) (Max): 170 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Td (on/off) @ 25°C: 43ns/300ns

Win Source Part Number: 1351947-APT85GR120B2
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package: Tube
Standard Package: 1
Power - Max: 962 W
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 340 A
Switching Energy: 6mJ (on) , 3.8mJ (off)
Input Type: Standard
Gate Charge: 660 nC
Test Condition: 600V, 85A, 4.3Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: T-MAX™
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT85GR120
Current - Collector (Ic) (Max): 170 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
Td (on/off) @ 25°C: 43ns/300ns

Buy Now Datasheet
Singapore
1200V 170A 962W IGBT Transistor
279-APT85GR120B2
1200V 170A 962W IGBT Transistor 279-APT85GR120B2
IGBT 1200V 170A 962W TO247 Product overview: APT85GR120B2 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 170A, 962W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 170A, 962W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT85GR120B2 can be used for catalog matching and distributor lookup.

IGBT 1200V 170A 962W TO247 Product overview: APT85GR120B2 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 170A, 962W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 170A, 962W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT85GR120B2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT85GR120B2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT85GR120B2
Discrete Semiconductor Products - Transistors - IGBTs APT85GR120B2
IGBT 1200V 170A 962W TO247

IGBT 1200V 170A 962W TO247

Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT85GR120B2 1351947-APT85GR120B2 279-APT85GR120B2 APT85GR120B2
Product Name Power IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1200V 170A 962W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
Package Type T-Max™ SOT3 Tube
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