Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs APT85GR120B2

Description
Win Source Part Number: 1351947-APT85GR120B2 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 1 Power - Max: 962 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 340 A Switching Energy: 6mJ (on) , 3.8mJ (off) Input Type: Standard Gate Charge: 660 nC Test Condition: 600V, 85A, 4.3Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT85GR120 Current - Collector (Ic) (Max): 170 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Td (on/off) @ 25°C: 43ns/300ns
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1351947-APT85GR120B2 - Win Source Electronics
    Win Source Electronics
  • Power IGBT Transistor - APT85GR120B2 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - IGBTs - APT85GR120B2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1351947-APT85GR120B2 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 1 Power - Max: 962 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 340 A Switching Energy: 6mJ (on) , 3.8mJ (off) Input Type: Standard Gate Charge: 660 nC Test Condition: 600V, 85A, 4.3Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT85GR120 Current - Collector (Ic) (Max): 170 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Td (on/off) @ 25°C: 43ns/300ns
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1351947-APT85GR120B2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1351947-APT85GR120B2
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1351947-APT85GR120B2
Win Source Part Number: 1351947-APT85GR120B2 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 1 Power - Max: 962 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 340 A Switching Energy: 6mJ (on) , 3.8mJ (off) Input Type: Standard Gate Charge: 660 nC Test Condition: 600V, 85A, 4.3Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT85GR120 Current - Collector (Ic) (Max): 170 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Td (on/off) @ 25°C: 43ns/300ns

Win Source Part Number: 1351947-APT85GR120B2
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package: Tube
Standard Package: 1
Power - Max: 962 W
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 340 A
Switching Energy: 6mJ (on) , 3.8mJ (off)
Input Type: Standard
Gate Charge: 660 nC
Test Condition: 600V, 85A, 4.3Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: T-MAX™
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT85GR120
Current - Collector (Ic) (Max): 170 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
Td (on/off) @ 25°C: 43ns/300ns

Buy Now Datasheet
Power IGBT Transistor - APT85GR120B2 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT85GR120B2
Power IGBT Transistor APT85GR120B2
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - APT85GR120B2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT85GR120B2
Discrete Semiconductor Products - Transistors - IGBTs APT85GR120B2
IGBT 1200V 170A 962W TO247

IGBT 1200V 170A 962W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1351947-APT85GR120B2 APT85GR120B2 APT85GR120B2
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Power IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
VCES 1200 volts
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