APT80GA90B2SC50 is a 900 V, 80 A punch-through IGBT with a co-packaged silicon carbide anti-parallel diode in a T-MAX package, rated for industrial applications. The device has a maximum collector current of 80 A at 110 °C, a total power dissipation of 625 W, and a junction-to-case thermal resistance of 0.14 °C/W for the IGBT. It features zero reverse recovery, switching safe operating area rated at 239 A under 900 V and 150 °C, and a gate charge of 200 nC. The T-MAX package has 3 leads with a 5.44 mm pitch, overall height of 4.70 to 5.31 mm, and weighs 6.2 g. The part is RoHS compliant and operates within a junction temperature range of -55 °C to 150 °C.
900 V, 80 A Power MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-MAX
Features
| Richardson RFPD | |
|---|---|
| Product Category | Transistors |
| Product Number | APT80GA90B2SC50 |
| Product Name | Silicon Carbide/Silicon Hybrid Modules |
| Transistor Technology / Material | Silicon Carbide |
