900 V, 80 A Power MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-MAX
Features
Low conduction loss and saturation voltage
Low gate charge
Ultrafast tail current shutoff
No reverse recovery
High operating frequency
Switching safe operating area (SSOA) rated
RoHS compliant
Zero Eon switching loss from co-packaged, anti-parallel diode
900 V, 80 A Power MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-MAX
Features
- Low conduction loss and saturation voltage
- Low gate charge
- Ultrafast tail current shutoff
- No reverse recovery
- High operating frequency
- Switching safe operating area (SSOA) rated
- RoHS compliant
- Zero Eon switching loss from co-packaged, anti-parallel diode
