Microchip Technology, Inc. Power IGBT Transistor APT80GA60LD40

Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

Win Source Part Number: 1220581-APT80GA60LD40
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: POWER MOS 8™
Package: Tube
Standard Package: 1
Power - Max: 625 W
Reverse Recovery Time (trr): 22 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 143 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Switching Energy: 840µJ (on), 751µJ (off)
Input Type: Standard
Gate Charge: 230 nC
Td (on/off) @ 25°C: 23ns/158ns
Test Condition: 400V, 47A, 4.7Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT80GA60