Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
IGBT 600V 143A 625W TO264 Product overview: APT80GA60LD40 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 143A, 625W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 143A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT80GA60LD40 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1220581-APT80GA60LD4
Category: Discrete Semiconductor Products>Transistors
Series: POWER MOS 8™
Package: Tube
Standard Package: 1
Power - Max: 625 W
Reverse Recovery Time (trr): 22 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 143 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Switching Energy: 840µJ (on), 751µJ (off)
Input Type: Standard
Gate Charge: 230 nC
Td (on/off) @ 25°C: 23ns/158ns
Test Condition: 400V, 47A, 4.7Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT80GA60
IGBT 600V 143A 625W TO264
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT80GA60LD40 | 279-APT80GA60LD40 | 1220581-APT80GA60LD40 | APT80GA60LD40 |
| Product Name | Power IGBT Transistor | 600V 143A 625W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-264 | Tube | SOT3 |