Microchip Technology, Inc. Power FREDFET Transistor APT80F60J

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
Request a Quote
Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Power FREDFET Transistor - APT80F60J - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT80F60J
Power FREDFET Transistor APT80F60J
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT80F60J - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT80F60J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT80F60J
MOSFET N-CH 600V 84A ISOTOP

MOSFET N-CH 600V 84A ISOTOP

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APT80F60J APT80F60J
Product Name Power FREDFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Type Power FREDFET Transistor
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215 - 855010-2PB709ASL/PA215 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Single FETs, MOSFETs - UJ3C120080K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
4 suppliers
GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details