Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8030JVR APT8030JVR

Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1203689-APT8030JVR Current Rating: 25 A Drain to Source Voltage (Vdss): 800 V Number of Elements: 1 Input Capacitance: 7.9 nF Power Dissipation: 450 W Number of Pins: 4 Rise Time: 14 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-227-4 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Chassis Mount, Screw RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 800 V Max Power Dissipation: 450 W Turn-On Delay Time: 16 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 25 A Turn-Off Delay Time: 59 ns Gate to Source Voltage (Vgs): 30 V Rds On Max: 300 mΩ
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Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1203689-APT8030JVR Current Rating: 25 A Drain to Source Voltage (Vdss): 800 V Number of Elements: 1 Input Capacitance: 7.9 nF Power Dissipation: 450 W Number of Pins: 4 Rise Time: 14 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-227-4 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Chassis Mount, Screw RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 800 V Max Power Dissipation: 450 W Turn-On Delay Time: 16 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 25 A Turn-Off Delay Time: 59 ns Gate to Source Voltage (Vgs): 30 V Rds On Max: 300 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8030JVR - 1203689-APT8030JVR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8030JVR
1203689-APT8030JVR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8030JVR 1203689-APT8030JVR
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1203689-APT8030JVR Current Rating: 25 A Drain to Source Voltage (Vdss): 800 V Number of Elements: 1 Input Capacitance: 7.9 nF Power Dissipation: 450 W Number of Pins: 4 Rise Time: 14 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-227-4 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Chassis Mount, Screw RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 800 V Max Power Dissipation: 450 W Turn-On Delay Time: 16 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 25 A Turn-Off Delay Time: 59 ns Gate to Source Voltage (Vgs): 30 V Rds On Max: 300 mΩ

Manufacturer: Microchip Technology
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1203689-APT8030JVR
Current Rating: 25 A
Drain to Source Voltage (Vdss): 800 V
Number of Elements: 1
Input Capacitance: 7.9 nF
Power Dissipation: 450 W
Number of Pins: 4
Rise Time: 14 ns
Fall Time: 8 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-227-4
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Lead Free: Lead Free
Mount: Chassis Mount, Screw
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 800 V
Max Power Dissipation: 450 W
Turn-On Delay Time: 16 ns
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 25 A
Turn-Off Delay Time: 59 ns
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 300 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1203689-APT8030JVR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8030JVR
PD 450000 milliwatts
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