The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.
IGBT Module PT Single 600V 130A 431W Chassis Mount ISOTOP®
IGBT 600V 130A 431W SOT227
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT65GP60JDQ2 | APT65GP60JDQ2-ND | APT65GP60JDQ2 |
| Product Name | Power IGBT Transistor | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | SOT-227 | ISOTOP |
