APT64GA90B2SC30 is a 900 V, 64 A punch-through IGBT with a co-packaged silicon carbide anti-parallel diode in a T-MAX package measuring 20.80 to 21.46 mm in length, 15.49 to 16.26 mm in width, and 4.70 to 5.31 mm in height. It operates with a junction temperature range of -55 to 150 °C and has a continuous collector current rating of 64 A at 110 °C. The device features zero reverse recovery, a switching safe operating area rated at 193 A at 900 V and 150 °C, and is RoHS compliant. Thermal resistance from junction to case is 0.17 to 0.25 °C/W for the IGBT and 0.4 to 0.58 °C/W for the diode. Total gate charge is 162 nC, with a gate-emitter plateau voltage of 7.5 V. Turn-off switching energy is 1088 µJ at 25 °C and 2311 µJ at 125 °C at 38 A and 600 V.
900 V, 64 A Power MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-MAX
Features
| Richardson RFPD | |
|---|---|
| Product Category | Transistors |
| Product Number | APT64GA90B2SC30 |
| Product Name | Silicon Carbide/Silicon Hybrid Modules |
| Transistor Technology / Material | Silicon Carbide |
