Microchip Technology, Inc. Power IGBT Transistor APT60GT60JR

Description
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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Description
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT60GT60JR - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT60GT60JR
Power IGBT Transistor APT60GT60JR
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - APT60GT60JR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT60GT60JR
Discrete Semiconductor Products - Transistors - IGBTs APT60GT60JR
IGBT MODULE 600V 93A 378W ISOTOP

IGBT MODULE 600V 93A 378W ISOTOP

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT60GT60JR APT60GT60JR
Product Name Power IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
Package Type SOT-227
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