Microchip Technology, Inc. 600V 112A 356W IGBT Transistor APT60GA60JD60

IGBT MOD 600V 112A 356W ISOTOP Product overview: APT60GA60JD60 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 112A, 356W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 600V, 112A, 356W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT60GA60JD60 can be used for catalog matching and distributor lookup.

Manufacturer: Microchip Technology
Win Source Part Number: 1324940-APT60GA60JD60
Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 356 W
Configuration: Single
Input: Standard
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 112 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
NTC Thermistor: No
Supplier Device Package: ISOTOP®
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 82
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT60GA60
RoHS Status: RoHS Compliant

High Speed PT IGBT. POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.