Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Modules APT60GA60JD60

Description
Manufacturer: Microchip Technology Win Source Part Number: 1324940-APT60GA60JD6 0 Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Packaging: Tube Standard Package: 1 Mounting: Chassis Mount Power - Max: 356 W Configuration: Single Input: Standard IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 112 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Current - Collector Cutoff (Max): 275 µA Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V NTC Thermistor: No Supplier Device Package: ISOTOP® Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: APT60GA60 RoHS Status: RoHS Compliant
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Description
Manufacturer: Microchip Technology Win Source Part Number: 1324940-APT60GA60JD6 0 Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Packaging: Tube Standard Package: 1 Mounting: Chassis Mount Power - Max: 356 W Configuration: Single Input: Standard IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 112 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Current - Collector Cutoff (Max): 275 µA Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V NTC Thermistor: No Supplier Device Package: ISOTOP® Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: APT60GA60 RoHS Status: RoHS Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Modules - 1324940-APT60GA60JD60 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Modules
1324940-APT60GA60JD60
Discrete Semiconductor Products - Transistors - IGBTs - Modules 1324940-APT60GA60JD60
Manufacturer: Microchip Technology Win Source Part Number: 1324940-APT60GA60JD6 0 Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Packaging: Tube Standard Package: 1 Mounting: Chassis Mount Power - Max: 356 W Configuration: Single Input: Standard IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 112 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Current - Collector Cutoff (Max): 275 µA Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V NTC Thermistor: No Supplier Device Package: ISOTOP® Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: APT60GA60 RoHS Status: RoHS Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1324940-APT60GA60JD60
Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 356 W
Configuration: Single
Input: Standard
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 112 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
NTC Thermistor: No
Supplier Device Package: ISOTOP®
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 82
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT60GA60
RoHS Status: RoHS Compliant

Buy Now Datasheet
Power IGBT Transistor - APT60GA60JD60 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT60GA60JD60
Power IGBT Transistor APT60GA60JD60
High Speed PT IGBT. POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

High Speed PT IGBT. POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

Supplier's Site
Singapore
600V 112A 356W IGBT Transistor
297-APT60GA60JD60
600V 112A 356W IGBT Transistor 297-APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP Product overview: APT60GA60JD60 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 112A, 356W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 600V, 112A, 356W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT60GA60JD60 can be used for catalog matching and distributor lookup.

IGBT MOD 600V 112A 356W ISOTOP Product overview: APT60GA60JD60 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 112A, 356W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 600V, 112A, 356W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT60GA60JD60 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - APT60GA60JD60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT60GA60JD60
Discrete Semiconductor Products - Transistors - IGBTs APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP

IGBT MOD 600V 112A 356W ISOTOP

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1324940-APT60GA60JD60 APT60GA60JD60 297-APT60GA60JD60 APT60GA60JD60
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Modules Power IGBT Transistor 600V 112A 356W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
VCES 600 volts
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