Microchip Technology, Inc. 650V/Boost chopper/IGBT modules APT50GLQ65JU2-Module

Description
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Boost chopper VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 50 Silicon type: TRENCH 3 FAST Package: SOT227
Datasheet
Description
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Boost chopper VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 50 Silicon type: TRENCH 3 FAST Package: SOT227
Datasheet

Suppliers

Company
Product
Description
Supplier Links
650V/Boost chopper/IGBT modules - APT50GLQ65JU2-Module - Microchip Technology, Inc.
Chandler, AZ, United States
650V/Boost chopper/IGBT modules
APT50GLQ65JU2-Module
650V/Boost chopper/IGBT modules APT50GLQ65JU2-Module
IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Boost chopper VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 50 Silicon type: TRENCH 3 FAST Package: SOT227
  • IGBT 3 fast
  • Low voltage drop
  • Low leakage current
  • Low switching losses
  • Kelvin emitter for easy drive
  • Low stray inductance
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Internal thermistor for temperature monitoring (optional)
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS Compliant

Additional Features

    • Configuration: Boost chopper
    • VCES (V): 650
    • VCESat (V): 1.85
    • Current (A) Tc=80C: 50
    • Silicon type: TRENCH 3 FAST
    • Package: SOT227
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APT50GLQ65JU2-Module
Product Name 650V/Boost chopper/IGBT modules
Technology IGBT
Unlock Full Specs
to access all available technical data

Similar Products

Intelligent Power Modules (IPM) - IKCM15H60GA - Infineon Technologies AG
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 36x21
View Details
IGBT Modules 2-Pack - 7th-Gen X Series Model 2MBI600XNG170-50 - Fuji Electric Corp. of America
Specs
Technology IGBT
Package M254
Output Voltage 1700 volts
View Details
1000V/Full bridge/Si Mosfet modules - APTM100H45FT3G-Module - Microchip Technology, Inc.
Specs
Technology MOSFET
Configuration Full Bridge
Output Voltage 1000 volts
View Details
Integrated Power Modules -  - Semikron, Inc.
Specs
Technology Intelligent Power Module (IPM)
Configuration Half-Bridge; Six-Pack
Output Voltage 1200 to 1700 volts
View Details