Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APT50GF60JCU2

The APT50GF60JCU2 is a hybrid IGBT and SiC Schottky diode module for high-frequency boost chopper applications, packaged in an ISOTOP® (SOT-227) case measuring 31.7 mm × 12.8 mm × 4.9 mm and weighing 29.2 g. The IGBT supports 600 V collector-emitter voltage and 50 A continuous current at 90°C case temperature, with a peak current of 230 A. The SiC diode provides 600 V reverse voltage and 20 A forward current at 125°C. It features zero reverse recovery, positive temperature coefficient on forward voltage, and low thermal resistance (0.45 °C/W IGBT, 1.35 °C/W diode). Switching frequencies up to 100 kHz are supported, with reverse bias safe operating area rated at 100 A @ 500 V and 125°C. The module offers 2500 V RMS isolation and is RoHS compliant. Junction and storage temperature range is -55°C to 150°C.