Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Modules APT46GA90JD40

Manufacturer: Microchip Technology
Win Source Part Number: 1325544-APT46GA90JD40
Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 284 W
Configuration: Single
Input: Standard
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 87 A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
NTC Thermistor: No
Supplier Device Package: ISOTOP®
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT46GA90
RoHS Status: RoHS Compliant

Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.