Microchip Technology, Inc. Power IGBT Transistor APT46GA90JD40

Description
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
  • Power IGBT Transistor - APT46GA90JD40 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - IGBTs - Modules - 1325544-APT46GA90JD40 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - APT46GA90JD40 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT46GA90JD40 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT46GA90JD40
Power IGBT Transistor APT46GA90JD40
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
900V 87A 284W IGBT Transistor
297-APT46GA90JD40
900V 87A 284W IGBT Transistor 297-APT46GA90JD40
IGBT MODULE 900V 87A 284W ISOTOP Product overview: APT46GA90JD40 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 87A, 284W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 900V, 87A, 284W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT46GA90JD40 can be used for catalog matching and distributor lookup.

IGBT MODULE 900V 87A 284W ISOTOP Product overview: APT46GA90JD40 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 87A, 284W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 900V, 87A, 284W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT46GA90JD40 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Modules - 1325544-APT46GA90JD40 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Modules
1325544-APT46GA90JD40
Discrete Semiconductor Products - Transistors - IGBTs - Modules 1325544-APT46GA90JD40
Manufacturer: Microchip Technology Win Source Part Number: 1325544-APT46GA90JD4 0 Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Packaging: Tube Standard Package: 1 Mounting: Chassis Mount Power - Max: 284 W Configuration: Single Input: Standard IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 87 A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V NTC Thermistor: No Supplier Device Package: ISOTOP® Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 74 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: APT46GA90 RoHS Status: RoHS Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1325544-APT46GA90JD40
Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 284 W
Configuration: Single
Input: Standard
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 87 A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
NTC Thermistor: No
Supplier Device Package: ISOTOP®
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT46GA90
RoHS Status: RoHS Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT46GA90JD40 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT46GA90JD40
Discrete Semiconductor Products - Transistors - IGBTs APT46GA90JD40
IGBT MODULE 900V 87A 284W ISOTOP

IGBT MODULE 900V 87A 284W ISOTOP

Supplier's Site

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT46GA90JD40 297-APT46GA90JD40 1325544-APT46GA90JD40 APT46GA90JD40
Product Name Power IGBT Transistor 900V 87A 284W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs - Modules Discrete Semiconductor Products - Transistors - IGBTs
Package Type SOT-227 Tube SOT3; SOT-227-4, miniBLOC
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