APT43GA90BSC30 is a 900 V, 43 A punch-through IGBT with a co-packaged anti-parallel SiC diode in a TO-247 package, weighing 6.2 g. It has a continuous collector current rating of 43 A at 110 °C and a peak current of 129 A. The device exhibits low conduction loss, ultrafast tail current shutoff, no reverse recovery, and is rated for switching safe operating area at 900 V and 150 °C. Junction-to-case thermal resistance is 0.26 to 0.37 °C/W for the IGBT and 0.4 to 0.58 °C/W for the diode. Operating junction temperature ranges from -55 °C to 150 °C. The IGBT has a gate threshold voltage of 3 to 6 V, a collector-emitter on-state voltage of 2.5 to 3.1 V at 25 °C, and total gate charge of 116 nC. Switching energy loss is 425 µJ at turn-off and 475 µJ at turn-on at 25 °C. The device is RoHS compliant.
900 V, 43 A MOS 8 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, TO-247
Features
| Richardson RFPD | |
|---|---|
| Product Category | Transistors |
| Product Number | APT43GA90BSC30 |
| Product Name | Silicon Carbide/Silicon Hybrid Modules |
| Transistor Technology / Material | Silicon Carbide |
