The APT40GR120B2SCD10 is a 1200V, 40A Ultra Fast NPT IGBT in a TO-247 package with an integrated anti-parallel SiC diode, designed for high-frequency switching applications such as motor control and uninterruptible power supplies. It has a maximum continuous collector current of 40A at 110°C, a collector-emitter on-voltage of 2.5V at 40A and 25°C, and a short circuit withstand time of 10μs at 600V and 125°C. It supports a total power dissipation of 500W at 25°C and operates from -55°C to 150°C junction temperature. RoHS compliant, it features low leakage current, low tail current, and a gate-emitter plateau voltage of 7V. Thermal resistance from junction to case is 0.25°C/W for the IGBT and 1.00°C/W for the diode. The package dimensions follow the standard TO-247 outline without a mounting hole.
IGBTs Insulated Gate Bipolar Transistor - Power MOS 8 Product overview: APT40GR120B2SCD10 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT40GR120B2SCD1
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-APT40GR120B2SCD10 |
| Product Name | IGBT Transistor |
| PD | 500 milliwatts |
