Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APT40GLQ120JCU2

Description
Features High speed Trench + Field Stop Fast IGBT 4 Technology: Low voltage drop, Low leakage current, Low switching losses, Low leakage current, RBSOA and SCSOA rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF ISOTOP Package (SOT-227) Very low stray inductance High level of integration Benefits Low conduction losses Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched Mode Power Supplies Brake switch Power factor correction
Request a Quote Datasheet
Description
Features High speed Trench + Field Stop Fast IGBT 4 Technology: Low voltage drop, Low leakage current, Low switching losses, Low leakage current, RBSOA and SCSOA rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF ISOTOP Package (SOT-227) Very low stray inductance High level of integration Benefits Low conduction losses Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched Mode Power Supplies Brake switch Power factor correction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide/Silicon Hybrid Modules - APT40GLQ120JCU2 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APT40GLQ120JCU2
Silicon Carbide/Silicon Hybrid Modules APT40GLQ120JCU2
Features High speed Trench + Field Stop Fast IGBT 4 Technology: Low voltage drop, Low leakage current, Low switching losses, Low leakage current, RBSOA and SCSOA rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF ISOTOP Package (SOT-227) Very low stray inductance High level of integration Benefits Low conduction losses Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS compliant Applications AC and DC motor control Switched Mode Power Supplies Brake switch Power factor correction

Features

  • High speed Trench + Field Stop Fast IGBT 4 Technology: Low voltage drop, Low leakage current, Low switching losses, Low leakage current, RBSOA and SCSOA rated, Very Rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • ISOTOP Package (SOT-227)
  • Very low stray inductance
  • High level of integration

Benefits

  • Low conduction losses
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS compliant

Applications

  • AC and DC motor control
  • Switched Mode Power Supplies
  • Brake switch
  • Power factor correction
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT40GLQ120JCU2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT40GLQ120JCU2
Discrete Semiconductor Products - Transistors - IGBTs APT40GLQ120JCU2
IGBT MOD 1200V 80A 312W SOT227

IGBT MOD 1200V 80A 312W SOT227

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number APT40GLQ120JCU2 APT40GLQ120JCU2
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - IGBTs
Transistor Technology / Material Silicon Carbide
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