1200 V, 22 A at 100 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-Max
Features
Low conduction loss and saturation voltage
Low gate charge
Ultrafast tail current shutoff
No reverse recovery
High operating frequency
Reverse-bias safe operating area (RBSOA) rated
RoHS compliant
Zero Eon switching loss from co-packaged, anti-parallel diode
1200 V, 22 A at 100 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-Max
Features
- Low conduction loss and saturation voltage
- Low gate charge
- Ultrafast tail current shutoff
- No reverse recovery
- High operating frequency
- Reverse-bias safe operating area (RBSOA) rated
- RoHS compliant
- Zero Eon switching loss from co-packaged, anti-parallel diode
