1200 V, 35 A Power MOS 7™ PT IGBT with co-packaged anti-parallel SiC diode in a T-MAX package, rated for continuous collector current of 46 A at 110 °C and pulsed current of 140 A, with a junction-to-case thermal resistance of 0.21-0.23 °C/W for the IGBT and 0.65-0.95 °C/W for the diode, operating junction temperature from -55 °C to 150 °C, and RoHS compliant. The device features zero reverse recovery, reverse-bias safe operating area (RBSOA) rated at 140 A at 960 V and 150 °C, and total gate charge of 150 nC.
1200 V, 22 A at 100 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, T-Max
Features
| Richardson RFPD | |
|---|---|
| Product Category | Transistors |
| Product Number | APT35GP120B2SC20 |
| Product Name | Silicon Carbide/Silicon Hybrid Modules |
| Transistor Technology / Material | Silicon Carbide |
