N-Channel 1000V 35A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
MOSFET N-CH 1000V 35A T-MAX
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | APT34F100B2-ND | APT34F100B2 | APT34F100B2 |
| Product Name | Single FETs, MOSFETs | Power FREDFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
