A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch mode power supplies and tail current sensitive applications. In many cases, the Power MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
IGBT 600V 100A 463W TO247
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT30GP60BG | APT30GP60BG |
| Product Name | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-247; TO-247 |
