Microchip Technology, Inc. Single FETs, MOSFETs APT10M09B2VFRG

N-Channel enhancement mode power MOSFET designed for high-voltage switching applications, available in T-MAX™ (B2) or TO-264 package. Rated for 100 V drain-source voltage and 100 A continuous drain current at 25°C, with a pulsed drain current of 400 A. Features a low on-state resistance of 0.009 Ω at V_GS = 10 V and I_D = 50 A, a fast recovery body diode with reverse recovery time of 190 ns at 25°C, and avalanche energy ratings of 50 mJ repetitive and 3000 mJ single pulse. Operates from -55°C to 150°C junction temperature, with a junction-to-case thermal resistance of 0.20 °C/W. Complies with AEC-Q200 and RoHS standards.