Win Source Part Number: 1153785-APL602B2G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 730W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APL602
Drive Voltage (Max Rds On, Min Rds On): 12V
N-Channel 600V 49A (Tc) 730W (Tc) Through Hole T-MAX™ [B2]
MOSFET N-CH 600V 49A T-MAX
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1153785-APL602B2G | APL602B2G-ND | APL602B2G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
