Microchip Technology, Inc. Memory 93LC66CT-E/MNY

Description
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote Datasheet
Description
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 93LC66CT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)

EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)

Buy Now Datasheet
Singapore
Memory IC and Storage Component
774-93LC66CT-E/MNY
Memory IC and Storage Component 774-93LC66CT-E/MNY
IC EEPROM 4KBIT MICROWIRE 8TDFN Product overview: 93LC66CT-E/MNY from Microchip Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-93LC66CT-E/MNY can be used for catalog matching and distributor lookup.

IC EEPROM 4KBIT MICROWIRE 8TDFN Product overview: 93LC66CT-E/MNY from Microchip Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-93LC66CT-E/MNY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1323502-93LC66CT-E/MNY - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1323502-93LC66CT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 1323502-93LC66CT-E/MNY
Manufacturer: Microchip Technology Win Source Part Number: 1323502-93LC66CT-E/M NY Category: Integrated Circuits (ICs)>Memory>Memory Packaging: Reel - TR Standard Package: 3,300 Mounting: Surface Mount Technology: EEPROM Memory Type: Non-Volatile Memory Size: 4Kb (512 x 8, 256 x 16) Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: 8-TDFN (2x3) Temperature Range - Operating: -40°C ~ 125°C Case / Package: 8-WFDFN Exposed Pad Memory Format: EEPROM Clock Frequency: 3 MHz Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Base Product Number: 93LC66 RoHS Status: ROHS3 Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1323502-93LC66CT-E/MNY
Category: Integrated Circuits (ICs)>Memory>Memory
Packaging: Reel - TR
Standard Package: 3,300
Mounting: Surface Mount
Technology: EEPROM
Memory Type: Non-Volatile
Memory Size: 4Kb (512 x 8, 256 x 16)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 8-TDFN (2x3)
Temperature Range - Operating: -40°C ~ 125°C
Case / Package: 8-WFDFN Exposed Pad
Memory Format: EEPROM
Clock Frequency: 3 MHz
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
ECCN: EAR99
Fake Threat In the Open Market: 81
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0051
Base Product Number: 93LC66
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93LC66CT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93LC66CT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 93LC66CT-E/MNY
IC EEPROM 4KBIT MICROWIRE 8TDFN

IC EEPROM 4KBIT MICROWIRE 8TDFN

Supplier's Site
Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip - 79T9135 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip
79T9135
Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip 79T9135
EEPROM, 4KBIT, -40 TO 125DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit / 256 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:3MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

EEPROM, 4KBIT, -40 TO 125DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit / 256 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:3MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet
IC EEPROM 4KBIT SPI 3MHZ 8TDFN

IC EEPROM 4KBIT SPI 3MHZ 8TDFN

Supplier's Site Datasheet
Memory - 93LC66CT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit Microwire 3 MHz 8-TDFN (2x3)

EEPROM Memory IC 4Kbit Microwire 3 MHz 8-TDFN (2x3)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93LC66CT-E/MNY-ND 774-93LC66CT-E/MNY 1323502-93LC66CT-E/MNY 93LC66CT-E/MNY 79T9135 93LC66CT-E/MNY 93LC66CT-E/MNY
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Integrated Circuits (ICs) - Memory - Memory Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip Memory Memory
Memory Category EEPROM EEPROM EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 C (-40 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad TDFN-EP 8-WFDFN Exposed Pad
Supply Voltage 2.5V ~ 5.5V -3.3V; 2.5 2.5V ~ 5.5V -40degC ~ 125degC (TA) 2.5V ~ 5.5V
Access Time 200 ns
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