Microchip Technology, Inc. Memory 93LC46CT-I/MNY

Description
EEPROM Memory IC 1Kb (128 x 8, 64 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 1Kb (128 x 8, 64 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 93LC46CT-I/MNY is a 1Kbit Microwire compatible serial EEPROM from Quarktwin Technology Ltd. It operates within a voltage range of 2.5V to 5.5V and supports both 8-bit and 16-bit word sizes, selectable via an ORG pin. This device features low-power CMOS technology, making it suitable for battery-operated applications. It supports self-timed erase and write cycles, including an automatic erase before writing all data. The EEPROM has a data retention capability exceeding 200 years and can endure up to 1,000,000 erase/write cycles. It is available in a compact 8-lead TDFN package, which is RoHS compliant. The operating temperature ranges include industrial (-40¬8C to +85¬8C) and automotive (-40¬8C to +125¬8C), making it versatile for various applications. The device also includes power-on/off data protection circuitry and a ready/busy status signal, enhancing its reliability in data management.

Datasheet Summary
Powered by GS/AI

The 93LC46CT-I/MNY is a 1Kbit Microwire compatible serial EEPROM from Quarktwin Technology Ltd. It operates within a voltage range of 2.5V to 5.5V and supports both 8-bit and 16-bit word sizes, selectable via an ORG pin. This device features low-power CMOS technology, making it suitable for battery-operated applications. It supports self-timed erase and write cycles, including an automatic erase before writing all data. The EEPROM has a data retention capability exceeding 200 years and can endure up to 1,000,000 erase/write cycles. It is available in a compact 8-lead TDFN package, which is RoHS compliant. The operating temperature ranges include industrial (-40¬8C to +85¬8C) and automotive (-40¬8C to +125¬8C), making it versatile for various applications. The device also includes power-on/off data protection circuitry and a ready/busy status signal, enhancing its reliability in data management.

Suppliers

Company
Product
Description
Supplier Links
Memory - 93LC46CT-I/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Kb (128 x 8, 64 x 16) SPI 3MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kb (128 x 8, 64 x 16) SPI 3MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 93LC46CT-I/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 3 MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kbit Microwire 3 MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93LC46CT-I/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93LC46CT-I/MNY
Integrated Circuits (ICs) - Memory - Memory 93LC46CT-I/MNY
IC EEPROM 1KBIT MICROWIRE 8TDFN

IC EEPROM 1KBIT MICROWIRE 8TDFN

Supplier's Site
Eeprom, 1Kbit, 3Mhz, -40 To 85Deg C; Memory Size Microchip - 66T9858 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 1Kbit, 3Mhz, -40 To 85Deg C; Memory Size Microchip
66T9858
Eeprom, 1Kbit, 3Mhz, -40 To 85Deg C; Memory Size Microchip 66T9858
EEPROM, 1KBIT, 3MHZ, -40 TO 85DEG C; Memory Size:1Kbit; EEPROM Memory Configuration:128 x 8bit / 64 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:3MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

EEPROM, 1KBIT, 3MHZ, -40 TO 85DEG C; Memory Size:1Kbit; EEPROM Memory Configuration:128 x 8bit / 64 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:3MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet
IC EEPROM 1KBIT SPI 3MHZ 8TDFN

IC EEPROM 1KBIT SPI 3MHZ 8TDFN

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93LC46CT-I/MNY-ND 93LC46CT-I/MNY 93LC46CT-I/MNY 66T9858 93LC46CT-I/MNY
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Eeprom, 1Kbit, 3Mhz, -40 To 85Deg C; Memory Size Microchip Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad TDFN-EP
Supply Voltage 2.5V ~ 5.5V 2.5V ~ 5.5V -40degC ~ 85degC (TA)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 579287-001-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8SLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details