Microchip Technology, Inc. Memory 93LC46BT-E/MNY

Description
EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-TDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-TDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 93LC46BT-E/MNY is a 1Kbit low-voltage serial EEPROM from Quarktwin Technology Ltd., designed for low-power applications. It operates within a voltage range of 2.5V to 5.5V and supports both 8-bit and 16-bit word sizes, depending on the configuration of the ORG pin. The device features self-timed erase and write cycles, including an automatic erase before writing all data. It is capable of enduring up to 1,000,000 erase/write cycles with a data retention period exceeding 200 years. This EEPROM is compliant with RoHS standards and is available in various package types, including 8-lead PDIP, SOIC, MSOP, SOT-23, DFN/TDFN, and TSSOP. It is suitable for industrial applications with operating temperature ranges from -40¬8C to +85¬8C and automotive applications up to +125¬8C. The device also includes power-on/off data protection circuitry and a ready/busy status signal, making it a reliable choice for non-volatile memory needs in embedded systems.

Datasheet Summary
Powered by GS/AI

The 93LC46BT-E/MNY is a 1Kbit low-voltage serial EEPROM from Quarktwin Technology Ltd., designed for low-power applications. It operates within a voltage range of 2.5V to 5.5V and supports both 8-bit and 16-bit word sizes, depending on the configuration of the ORG pin. The device features self-timed erase and write cycles, including an automatic erase before writing all data. It is capable of enduring up to 1,000,000 erase/write cycles with a data retention period exceeding 200 years. This EEPROM is compliant with RoHS standards and is available in various package types, including 8-lead PDIP, SOIC, MSOP, SOT-23, DFN/TDFN, and TSSOP. It is suitable for industrial applications with operating temperature ranges from -40¬8C to +85¬8C and automotive applications up to +125¬8C. The device also includes power-on/off data protection circuitry and a ready/busy status signal, making it a reliable choice for non-volatile memory needs in embedded systems.

Suppliers

Company
Product
Description
Supplier Links
Memory - 93LC46BT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93LC46BT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93LC46BT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 93LC46BT-E/MNY
IC EEPROM 1KBIT MICROWIRE 8TDFN

IC EEPROM 1KBIT MICROWIRE 8TDFN

Supplier's Site
Memory - 93LC46BT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 2 MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kbit Microwire 2 MHz 8-TDFN (2x3)

Buy Now Datasheet
IC EEPROM 1KBIT SPI 2MHZ 8TDFN

IC EEPROM 1KBIT SPI 2MHZ 8TDFN

Supplier's Site Datasheet
Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip - 66T9856 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip
66T9856
Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip 66T9856
EEPROM, 1KBIT, 2MHZ, -40 TO 125DEG C; Memory Size:1Kbit; EEPROM Memory Configuration:64 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:2MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes

EEPROM, 1KBIT, 2MHZ, -40 TO 125DEG C; Memory Size:1Kbit; EEPROM Memory Configuration:64 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:2MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93LC46BT-E/MNY-ND 93LC46BT-E/MNY 93LC46BT-E/MNY 93LC46BT-E/MNY 66T9856
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad TDFN-EP
Supply Voltage 2.5V ~ 5.5V -40degC ~ 125degC (TA) 2.5V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Flash Memory - 1882682P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - 3015357 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
 - 27S35ADM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP
View Details