Microchip Technology, Inc. Memory 93LC46AT-E/MNY

Description
EEPROM Memory IC 1Kb (128 x 8) SPI 2MHz 8-TDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 1Kb (128 x 8) SPI 2MHz 8-TDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 93LC46AT-E/MNY is a 1Kbit low-voltage serial EEPROM from Lingto Electronic Limited, designed for applications requiring nonvolatile memory. It operates within a voltage range of 2.5V to 5.5V and supports a temperature range of -40¬8C to +125¬8C, making it suitable for both industrial and automotive environments. The device features a 3-wire serial interface, allowing for efficient data communication, and includes self-timed erase/write cycles with automatic erase functionality. It offers a data retention period exceeding 200 years and can endure up to 1,000,000 erase/write cycles. The 93LC46AT-E/MNY is RoHS compliant and available in various package types, including 8-lead TDFN, which facilitates integration into compact designs.

Datasheet Summary
Powered by GS/AI

The 93LC46AT-E/MNY is a 1Kbit low-voltage serial EEPROM from Lingto Electronic Limited, designed for applications requiring nonvolatile memory. It operates within a voltage range of 2.5V to 5.5V and supports a temperature range of -40¬8C to +125¬8C, making it suitable for both industrial and automotive environments. The device features a 3-wire serial interface, allowing for efficient data communication, and includes self-timed erase/write cycles with automatic erase functionality. It offers a data retention period exceeding 200 years and can endure up to 1,000,000 erase/write cycles. The 93LC46AT-E/MNY is RoHS compliant and available in various package types, including 8-lead TDFN, which facilitates integration into compact designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - 93LC46AT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Kb (128 x 8) SPI 2MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kb (128 x 8) SPI 2MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1323374-93LC46AT-E/MNY - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1323374-93LC46AT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 1323374-93LC46AT-E/MNY
Manufacturer: Microchip Technology Win Source Part Number: 1323374-93LC46AT-E/M NY Category: Integrated Circuits (ICs)>Memory>Memory Packaging: Reel - TR Standard Package: 3,300 Mounting: Surface Mount Technology: EEPROM Memory Type: Non-Volatile Memory Size: 1Kb (128 x 8) Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: 8-TDFN (2x3) Temperature Range - Operating: -40°C ~ 125°C Case / Package: 8-WFDFN Exposed Pad Memory Format: EEPROM Clock Frequency: 2 MHz Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire ECCN: EAR99 Fake Threat In the Open Market: 69 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Base Product Number: 93LC46 RoHS Status: ROHS3 Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1323374-93LC46AT-E/MNY
Category: Integrated Circuits (ICs)>Memory>Memory
Packaging: Reel - TR
Standard Package: 3,300
Mounting: Surface Mount
Technology: EEPROM
Memory Type: Non-Volatile
Memory Size: 1Kb (128 x 8)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 8-TDFN (2x3)
Temperature Range - Operating: -40°C ~ 125°C
Case / Package: 8-WFDFN Exposed Pad
Memory Format: EEPROM
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
ECCN: EAR99
Fake Threat In the Open Market: 69
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0051
Base Product Number: 93LC46
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93LC46AT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93LC46AT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 93LC46AT-E/MNY
IC EEPROM 1KBIT MICROWIRE 8TDFN

IC EEPROM 1KBIT MICROWIRE 8TDFN

Supplier's Site
IC EEPROM 1KBIT SPI 2MHZ 8TDFN

IC EEPROM 1KBIT SPI 2MHZ 8TDFN

Supplier's Site Datasheet
Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip - 66T9854 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip
66T9854
Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip 66T9854
EEPROM, 1KBIT, 2MHZ, -40 TO 125DEG C; Memory Size:1Kbit; EEPROM Memory Configuration:128 x 8bit; Memory Interface Type:Serial Microwire; Clock Frequency:2MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes

EEPROM, 1KBIT, 2MHZ, -40 TO 125DEG C; Memory Size:1Kbit; EEPROM Memory Configuration:128 x 8bit; Memory Interface Type:Serial Microwire; Clock Frequency:2MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - 93LC46AT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit Microwire 2 MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kbit Microwire 2 MHz 8-TDFN (2x3)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93LC46AT-E/MNY-ND 1323374-93LC46AT-E/MNY 93LC46AT-E/MNY 93LC46AT-E/MNY 66T9854 93LC46AT-E/MNY
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Integrated Circuits (ICs) - Memory - Memory Memory Eeprom, 1Kbit, 2Mhz, -40 To 125Deg C; Memory Size Microchip Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM; EEPROM EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad TDFN-EP 8-WFDFN Exposed Pad
Supply Voltage 2.5V ~ 5.5V 2.5V ~ 5.5V -40degC ~ 125degC (TA) 2.5V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - CAT24C04YGI-T3 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 4 kbits
View Details
Memory - 8 611 200 794 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Logic - Logic - FIFOs Memory - 40105BE - 052142-40105BE - Win Source Electronics
Specs
Memory Category FIFO
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type DIP; 16-PDIP
View Details