Microchip Technology, Inc. Memory 93C76CT-I/MNY

Description
EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote Datasheet
Description
EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 93C76CT-I/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 93C76CT-I/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit Microwire 3 MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kbit Microwire 3 MHz 8-TDFN (2x3)

Buy Now Datasheet
IC EEPROM 8KBIT SPI 3MHZ 8TDFN

IC EEPROM 8KBIT SPI 3MHZ 8TDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93C76CT-I/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93C76CT-I/MNY
Integrated Circuits (ICs) - Memory - Memory 93C76CT-I/MNY
IC EEPROM 8KBIT MICROWIRE 8TDFN

IC EEPROM 8KBIT MICROWIRE 8TDFN

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93C76CT-I/MNY-ND 93C76CT-I/MNY 93C76CT-I/MNY 93C76CT-I/MNY
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V -40degC ~ 85degC (TA)
Unlock Full Specs
to access all available technical data

Similar Products

 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
Memory - AT24C256BN-10SU-1.8 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 550 ns
Density 256 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122202VYC - 5962F2122202VYC - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
Package Type CG-FP-68
View Details
Memory - AS4SD2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16000 kbits
View Details