Microchip Technology, Inc. Memory 93C76CT-E/MNY

Description
EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote Datasheet
Description
EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 93C76CT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 93C76CT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit Microwire 3 MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kbit Microwire 3 MHz 8-TDFN (2x3)

Buy Now Datasheet
IC EEPROM 8KBIT SPI 3MHZ 8TDFN

IC EEPROM 8KBIT SPI 3MHZ 8TDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93C76CT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93C76CT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 93C76CT-E/MNY
IC EEPROM 8KBIT MICROWIRE 8TDFN

IC EEPROM 8KBIT MICROWIRE 8TDFN

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93C76CT-E/MNY-ND 93C76CT-E/MNY 93C76CT-E/MNY 93C76CT-E/MNY
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V -40degC ~ 125degC (TA)
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