Microchip Technology, Inc. Memory 93C66CT-E/MNY

Description
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 93C66CT-E/MNY is a 4Kbit low-voltage serial EEPROM from Lingto Electronic Limited, designed for applications requiring nonvolatile memory. It operates within a voltage range of 4.5V to 5.5V and supports a temperature range from -40¬8C to +125¬8C, making it suitable for both industrial and automotive environments. The device features a 3-wire serial interface, allowing for efficient data communication, and includes self-timed erase/write cycles with automatic erase functionality. It offers a data retention period exceeding 200 years and can endure up to 1,000,000 erase/write cycles. The 93C66CT-E/MNY is available in various package types, including 8-lead TDFN, and is compliant with RoHS standards. This product is ideal for low-power applications where reliable data storage is essential.

Datasheet Summary
Powered by GS/AI

The 93C66CT-E/MNY is a 4Kbit low-voltage serial EEPROM from Lingto Electronic Limited, designed for applications requiring nonvolatile memory. It operates within a voltage range of 4.5V to 5.5V and supports a temperature range from -40¬8C to +125¬8C, making it suitable for both industrial and automotive environments. The device features a 3-wire serial interface, allowing for efficient data communication, and includes self-timed erase/write cycles with automatic erase functionality. It offers a data retention period exceeding 200 years and can endure up to 1,000,000 erase/write cycles. The 93C66CT-E/MNY is available in various package types, including 8-lead TDFN, and is compliant with RoHS standards. This product is ideal for low-power applications where reliable data storage is essential.

Suppliers

Company
Product
Description
Supplier Links
Memory - 93C66CT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)

EEPROM Memory IC 4Kb (512 x 8, 256 x 16) SPI 3MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 93C66CT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit Microwire 3 MHz 8-TDFN (2x3)

EEPROM Memory IC 4Kbit Microwire 3 MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 93C66CT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
93C66CT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 93C66CT-E/MNY
IC EEPROM 4KBIT MICROWIRE 8TDFN

IC EEPROM 4KBIT MICROWIRE 8TDFN

Supplier's Site
IC EEPROM 4KBIT SPI 3MHZ 8TDFN

IC EEPROM 4KBIT SPI 3MHZ 8TDFN

Supplier's Site Datasheet
Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip - 79T9129 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip
79T9129
Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip 79T9129
EEPROM, 4KBIT, -40 TO 125DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit / 256 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:3MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

EEPROM, 4KBIT, -40 TO 125DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit / 256 x 16bit; Memory Interface Type:Serial Microwire; Clock Frequency:3MHz; Memory Case Style:TDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 93C66CT-E/MNY-ND 93C66CT-E/MNY 93C66CT-E/MNY 93C66CT-E/MNY 79T9129
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Eeprom, 4Kbit, -40 To 125Deg C; Memory Size Microchip
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad TDFN-EP
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V -40degC ~ 125degC (TA)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - A2C00045443 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882517 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details