Microchip Technology, Inc. 1 Mb SPI Serial EERAM 48LM01

Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 131,072 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIJ (208mil wide) package
Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 131,072 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIJ (208mil wide) package
Datasheet
Datasheet Summary
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The 48LM01 is a 1-Mbit SPI serial EERAM with an SRAM array organized as 131,072 x 8 bits and hidden EEPROM backup for automatic data retention during power disruptions. It features a high-speed SPI interface operating up to 66 MHz with Schmitt trigger inputs for noise suppression, operates from 2.7 V to 3.6 V, and supports industrial temperature range of -40°C to +85°C. The device uses an 8-lead SOIJ package and requires a 47 μF to 100 μF capacitor on the VCAP pin for nonvolatile backup operations. Data is transferred in parallel between SRAM and EEPROM, with a minimum of 100,000 backup cycles at 85°C and 100 years of data retention at 55°C. Active current is 5 mA maximum at 85°C and 66 MHz, standby current is 200 μA maximum at 85°C, and hibernate current is 3 μA maximum at 85°C.

Datasheet Summary
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The 48LM01 is a 1-Mbit SPI serial EERAM with an SRAM array organized as 131,072 x 8 bits and hidden EEPROM backup for automatic data retention during power disruptions. It features a high-speed SPI interface operating up to 66 MHz with Schmitt trigger inputs for noise suppression, operates from 2.7 V to 3.6 V, and supports industrial temperature range of -40°C to +85°C. The device uses an 8-lead SOIJ package and requires a 47 μF to 100 μF capacitor on the VCAP pin for nonvolatile backup operations. Data is transferred in parallel between SRAM and EEPROM, with a minimum of 100,000 backup cycles at 85°C and 100 years of data retention at 55°C. Active current is 5 mA maximum at 85°C and 66 MHz, standby current is 200 μA maximum at 85°C, and hibernate current is 3 μA maximum at 85°C.

Suppliers

Company
Product
Description
Supplier Links
1 Mb SPI Serial EERAM - 48LM01 - Microchip Technology, Inc.
Chandler, AZ, United States
1 Mb SPI Serial EERAM
48LM01
1 Mb SPI Serial EERAM 48LM01
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 131,072 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIJ (208mil wide) package

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

Additional Features

  • 131,072 x 8 bit Serial SRAM with internal nonvolatile data backup
  • High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression
  • Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum)
  • Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
  • Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return
  • 100,000 Backups Minimum (at 20°C)
  • 100 years retention (at 20°C)
  • Operating Voltage Range: 2.7V-3.6V
  • Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
  • 8-SOIJ (208mil wide) package
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number 48LM01
Product Name 1 Mb SPI Serial EERAM
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