Microchip Technology, Inc. 512 Kb SPI Serial EERAM 48L512

Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package
Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package
Datasheet
Datasheet Summary
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The 48L512 is a 512-Kbit SPI serial EERAM with an SRAM array organized as 65,536 × 8 bits and hidden EEPROM backup that automatically preserves and restores data during power disruptions. It operates over a 2.7V to 3.6V supply range with an industrial temperature range of -40°C to +85°C. The device supports SPI communication up to 66 MHz with Schmitt trigger inputs for noise suppression, and uses an 8-lead SOIC package. Active current is 5 mA maximum at 85°C and 3.6 V, standby current is 200 µA maximum at 85°C, and hibernate current is 3 µA maximum at 85°C. The EEPROM backup supports a minimum of 100,000 transfer cycles at 85°C and 100-year data retention at 55°C. A 47 µF to 100 µF capacitor is required on the VCAP pin for proper operation.

Datasheet Summary
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The 48L512 is a 512-Kbit SPI serial EERAM with an SRAM array organized as 65,536 × 8 bits and hidden EEPROM backup that automatically preserves and restores data during power disruptions. It operates over a 2.7V to 3.6V supply range with an industrial temperature range of -40°C to +85°C. The device supports SPI communication up to 66 MHz with Schmitt trigger inputs for noise suppression, and uses an 8-lead SOIC package. Active current is 5 mA maximum at 85°C and 3.6 V, standby current is 200 µA maximum at 85°C, and hibernate current is 3 µA maximum at 85°C. The EEPROM backup supports a minimum of 100,000 transfer cycles at 85°C and 100-year data retention at 55°C. A 47 µF to 100 µF capacitor is required on the VCAP pin for proper operation.

Suppliers

Company
Product
Description
Supplier Links
512 Kb SPI Serial EERAM - 48L512 - Microchip Technology, Inc.
Chandler, AZ, United States
512 Kb SPI Serial EERAM
48L512
512 Kb SPI Serial EERAM 48L512
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

Additional Features

  • 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup
  • High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression
  • Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum)
  • Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
  • Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return
  • 100,000 Backups Minimum (at 20°C)
  • 100 years retention (at 20°C)
  • Operating Voltage Range: 2.7V-3.6V
  • Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
  • 8-SOIC (150mil wide) package
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number 48L512
Product Name 512 Kb SPI Serial EERAM
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