Microchip Technology, Inc. 512 Kb SPI Serial EERAM 48L512

Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package
Datasheet
Description
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package
Datasheet

Suppliers

Company
Product
Description
Supplier Links
512 Kb SPI Serial EERAM - 48L512 - Microchip Technology, Inc.
Chandler, AZ, United States
512 Kb SPI Serial EERAM
48L512
512 Kb SPI Serial EERAM 48L512
EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue. Additional Features 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum) Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Operating Voltage Range: 2.7V-3.6V Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC 8-SOIC (150mil wide) package

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

Additional Features

  • 65,536 x 8 bit Serial SRAM with internal nonvolatile data backup
  • High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression
  • Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum)
  • Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
  • Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return
  • 100,000 Backups Minimum (at 20°C)
  • 100 years retention (at 20°C)
  • Operating Voltage Range: 2.7V-3.6V
  • Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
  • 8-SOIC (150mil wide) package
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number 48L512
Product Name 512 Kb SPI Serial EERAM
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 48591912 - Radwell International
Fuji Electric Corp. of America
View Details
CSD17310Q5A 30V N Channel NexFET? Power MOSFET - CSD17310Q5A - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
8 suppliers
IGBTs - Single - AIKQ120N60CTXKSA1 - 860801-AIKQ120N60CTXKSA1 - Win Source Electronics
Specs
Transistor Type IGBT
Package Type SOT3; PG-TO247-3-46
View Details
5 suppliers