The 2N7008 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a 3-lead TO-92 case with a maximum drain-to-source breakdown voltage of 60 V, a gate-to-source voltage rating of ±30 V, and a continuous drain current of 230 mA at 25°C junction temperature. The device has a typical on-state resistance of 7.5 Ω at V<sub>GS</sub> = 10 V and I<sub>D</sub> = 500 mA, a gate threshold voltage range of 1 to 2.5 V, and an input capacitance of 50 pF. It operates from -55°C to +150°C and has a thermal resistance of 132°C/W. The transistor features an integral source-drain diode, high input impedance, thermal stability, and is free from secondary breakdown.
2N7008 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N7008 |
| Product Name | N-Channel Enhancement-Mode Vertical DMOS FET |
| Polarity | N-Channel |
