The 2N7002 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in a 3-lead SOT-23 and has a drain-to-source breakdown voltage of 60 V, a static drain-to-source on-state resistance of 7.5 Ω at 10 V gate-source voltage and 500 mA drain current, and a continuous drain current rating of 115 mA. The device features an integral source-drain diode with a forward voltage drop of 1.2 V and a reverse recovery time of 400 ns. Operating and storage temperatures range from -55°C to +150°C, with a thermal resistance of 203 °C/W. The gate threshold voltage is 1 to 2.5 V, and the input capacitance is 50 pF at 0 V gate-source voltage.
2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N7002 |
| Product Name | N-Channel Enhancement-Mode Vertical DMOS FET |
| Polarity | N-Channel |
