MOSFET N-CH 60V 115MA SOT23 Product overview: 2N7002-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 115MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 115MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002-G can be used for catalog matching and distributor lookup.
N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
MOSFET, N-CH, 60V, 0.115A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 115MA SOT23
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-2N7002-G | 2N7002-GMCDKR-ND | 644261 | 31AC2703 | 2N7002-G | 2N7002-G |
| Product Name | 60V 115MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Mosfet, N-Ch, 60V, 0.115A, Sot-23; Transistor Polarity Microchip | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| Transconductance | 8.00E-5 kS | |||||
| PD | 360 milliwatts | 360 milliwatts |
