MOSFET N-CH 60V 115MA SOT23 Product overview: 2N7002-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 115MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 115MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002-G can be used for catalog matching and distributor lookup.
N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
MOSFET N-CH 60V 115MA SOT23
MOSFET, N-CH, 60V, 0.115A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-2N7002-G | 2N7002-GMCDKR-ND | 644261 | 2N7002-G | 2N7002-G | 31AC2703 |
| Product Name | 60V 115MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 0.115A, Sot-23; Transistor Polarity Microchip |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| Transconductance | 8.00E-5 kS | |||||
| PD | 360 milliwatts | 360 milliwatts |
