Microchip Technology, Inc. N-Channel Enhancement-Mode Vertical DMOS FET 2N6661

Description
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Additional Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
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Description
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Additional Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Enhancement-Mode Vertical DMOS FET - 2N6661 - Microchip Technology, Inc.
Chandler, AZ, United States
N-Channel Enhancement-Mode Vertical DMOS FET
2N6661
N-Channel Enhancement-Mode Vertical DMOS FET 2N6661
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Additional Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Additional Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain
Supplier's Site Datasheet
Corby, Northants, United Kingdom
MOSFETs
1779750P
MOSFETs 1779750P
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,

MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1779587
MOSFETs 1779587
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,

MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1779750
MOSFETs 1779750
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,

MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,

Supplier's Site
Single FETs, MOSFETs - 2N6661MC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N6661MC-ND
Single FETs, MOSFETs 2N6661MC-ND
N-Channel 90V 350mA (Tj) 6.25W (Tc) Through Hole TO-39

N-Channel 90V 350mA (Tj) 6.25W (Tc) Through Hole TO-39

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
2N6661
MOSFET 2N6661
MOSFET 90V 4Ohm

MOSFET 90V 4Ohm

Buy Now Datasheet
Mosfet, N Ch, 1.5A, 90V, To-39; Transistor Polarity Microchip - 53Y4359 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 1.5A, 90V, To-39; Transistor Polarity Microchip
53Y4359
Mosfet, N Ch, 1.5A, 90V, To-39; Transistor Polarity Microchip 53Y4359
MOSFET, N CH, 1.5A, 90V, TO-39; Transistor Polarity:N Channel; Drain Source Voltage Vds:90V; Continuous Drain Current Id:1.5A; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3Pins RoHS Compliant: No

MOSFET, N CH, 1.5A, 90V, TO-39; Transistor Polarity:N Channel; Drain Source Voltage Vds:90V; Continuous Drain Current Id:1.5A; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3Pins RoHS Compliant: No

Supplier's Site
Mosfet, N-Ch, 90V, 1.5A, To-39-3; Transistor Polarity Microchip - 44AC3447 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 90V, 1.5A, To-39-3; Transistor Polarity Microchip
44AC3447
Mosfet, N-Ch, 90V, 1.5A, To-39-3; Transistor Polarity Microchip 44AC3447
MOSFET, N-CH, 90V, 1.5A, TO-39-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:90V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 90V, 1.5A, TO-39-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:90V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N6661 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6661
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N6661
MOSFET N-CH 90V 350MA TO39

MOSFET N-CH 90V 350MA TO39

Supplier's Site

Technical Specifications

  Microchip Technology, Inc. RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2N6661 1779750P 2N6661MC-ND 2N6661 53Y4359 2N6661
Product Name N-Channel Enhancement-Mode Vertical DMOS FET MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N Ch, 1.5A, 90V, To-39; Transistor Polarity Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type TO-39 TO-39; TO-39 TO-3; TO-39; TO-205AD, TO-39-3 Metal Can TO-3; TO-39 TO-39; TO-205AD, TO-39-3 Metal Can
MOSFET Operating Mode Enhancement
V(BR)DSS 90 volts
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