2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,
N-Channel 90V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
MOSFET, N CH, 1.5A, 90V, TO-39; Transistor Polarity:N Channel; Drain Source Voltage Vds:90V; Continuous Drain Current Id:1.5A; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3Pins RoHS Compliant: No
MOSFET, N-CH, 90V, 1.5A, TO-39-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:90V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 90V 350MA TO39
| Microchip Technology, Inc. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N6661 | 1779750P | 2N6661MC-ND | 2N6661 | 53Y4359 | 2N6661 |
| Product Name | N-Channel Enhancement-Mode Vertical DMOS FET | MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 1.5A, 90V, To-39; Transistor Polarity Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-39 | TO-39; TO-39 | TO-3; TO-39; TO-205AD, TO-39-3 Metal Can | TO-3; TO-39 | TO-39; TO-205AD, TO-39-3 Metal Can | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 90 volts |
