2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
N-Channel 90V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V,
MOSFET N-CH 90V 350MA TO39
MOSFET, N CH, 1.5A, 90V, TO-39; Transistor Polarity:N Channel; Drain Source Voltage Vds:90V; Continuous Drain Current Id:1.5A; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3Pins RoHS Compliant: No
MOSFET, N-CH, 90V, 1.5A, TO-39-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:90V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
| Microchip Technology, Inc. | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N6661 | 2N6661MC-ND | 1779750P | 2N6661 | 2N6661 | 53Y4359 |
| Product Name | N-Channel Enhancement-Mode Vertical DMOS FET | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 1.5A, 90V, To-39; Transistor Polarity Microchip |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-39 | TO-3; TO-39; TO-205AD, TO-39-3 Metal Can | TO-39; TO-39 | TO-39; TO-205AD, TO-39-3 Metal Can | TO-3; TO-39 | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 90 volts |
