2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
MOSFET N-CH 60V 990MA TO205AD
Manufacturer: Microchip Technology
Win Source Part Number: 053861-2N6660
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Tc)
Family Name: 2N6660
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AD, TO-39-3 Metal Can
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 410mA (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 50pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): 2N66602E3; 2N6660JTXP01; JANTX2N6660; 2N6660JTV01;
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial, Motor Drive & Control
MOSFET TRANSISTOR, THROUGH-HOLE MOUNT, CASE: TO-39-3, N-CHANNEL, DRAIN SOURCE BREAKDOWN VOLTAGE: 60 V, CONTINUOUS DRAIN CURRENT: 410 MA, DRAIN SOURCE RESISTANCE: 3 OHMS, GATE SOURCE THRESHOLD VOLTAGE: 800 MV, POWER DISSIPATION: 6.25 W. FREE 2 YEAR RADWELL WARRANTY
N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39
MOSFET N-CH 60V 410MA TO39
| Microchip Technology, Inc. | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | Radwell International | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N6660 | 2N6660 | 649369 | 053861-2N6660 | 94451131 | 2N6660MC-ND | 2N6660 | 2N6660 |
| Product Name | N-Channel Enhancement-Mode Vertical DMOS FET | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6660 | Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-39 | TO-39; TO-205AD, TO-39-3 Metal Can | TO-39; TO-39 | TO-3; TO-39; SOT3; TO-39 | TO-3; TO-39; TO-205AD, TO-39-3 Metal Can | TO-39; TO-205AD, TO-39-3 Metal Can | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts |
