NPN silicon power transistor in a TO-3 package rated for a collector-emitter voltage of 100 Vdc, collector current of 25 Adc, and total power dissipation of 200 W at 25°C, derating to 112 W at 100°C. The junction-to-case thermal resistance is 0.875°C/W. Qualified to MIL-PRF-19500/509 JANTX level. Operating and storage junction temperature range is -65°C to +175°C.
Bipolar (BJT) Transistor
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N6338MS-ND |
| Product Name | Single Bipolar Transistors |
