The ALD212900SAL is a dual precision N-channel EPAD® MOSFET array in an 8-pin SOIC package, designed for low-voltage, low-power analog applications. Each device features a Zero Threshold™ voltage of 0.00V ±0.01V, enabling operation down to 0.05V with sub-nanowatt power consumption and less than 1nA operating current. It exhibits matched transconductance and output conductance, with a typical on-resistance of 14Ω at VGS = +5.0V and a drain-source breakdown voltage of 10V. The matched pair has a gate threshold voltage offset of 2mV maximum and temperature drift of 5μV/°C. The device supports surface mount mounting and complies with RoHS standards.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 0.08A 8SOIC
MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD212900SAL | 1014-1209-ND | ALD212900SAL | ALD212900SAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Precision Zero Threshold | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
