Microchip Technology, Inc. Single Bipolar Transistors 2N4449UA/TR

NPN silicon switching transistor in a TO-46 (TO-206AB) package, qualified to JAN and JANTXV levels. Collector-emitter voltage is 15 Vdc, emitter-base voltage is 4.5 Vdc, and collector-base voltage is 40 Vdc. Total power dissipation is 0.50 W at ambient temperature, with thermal resistance junction-to-case of 125 °C/mW and junction-to-ambient of 350 °C/mW. Forward current transfer ratio ranges from 20 to 120 under specified bias conditions. Collector-emitter saturation voltage is 0.45 Vdc at 100 mA collector current and 10 mA base current. Base-emitter saturation voltage ranges from 0.80 to 1.20 Vdc under the same conditions. Switching times are 12 µs turn-on and 18 µs turn-off. Input and output capacitances are 5.0 pF and 4.0 pF, respectively. Operating and storage junction temperature range is -65 to +200 °C.