Microchip Technology, Inc. Single Bipolar Transistors 2N3792

PNP silicon transistor for high-power applications, rated for a collector-emitter voltage of 80 Vdc, collector current of 10 Adc, and total power dissipation of 5.0 W at 25°C. The device is housed in a TO-3 package and operates over a junction temperature range of -65°C to +200°C. Thermal resistance from junction to case is 1.17°C/W. Forward current transfer ratio ranges from 30 to 120 at 3.0 A collector current. Collector-emitter saturation voltage is up to 2.5 Vdc at 10 A collector current and 2.0 A base current. Qualified per MIL-PRF-19500/379 at JAN, JANTX, and JANTXV levels.