The 2N3440 is an NPN silicon bipolar transistor for medium-power, high-frequency switching applications. It is housed in a hermetically sealed TO-39 (TO-205AD) package with a collector-emitter voltage rating of 250 V, a collector current rating of 1.0 A, and a total power dissipation of 800 mW at 25°C. The collector-emitter saturation voltage is 0.5 V at 50 mA collector current and 4.0 mA base current. The device meets MIL-PRF-19500/368 qualifications for JAN, JANTX, JANTXV, and JANS reliability levels, and RoHS-compliant commercial versions are available. Junction temperature ranges from -65°C to +200°C. Turn-on time is 1.0 µs maximum, and turn-off time is 10 µs maximum under specified conditions.
Bipolar (BJT) Transistor NPN 250V 1A 800mW Through Hole TO-39 (TO-205AD)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N3440MS-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
