Microchip Technology, Inc. Single Bipolar Transistors 2N3019SP

The 2N3019SP is a low-power NPN silicon transistor in a TO-39 (TO-205AD) package, designed for high-reliability military applications. It has a collector-emitter voltage rating of 80 V, a collector current rating of 1.0 A, and a total power dissipation of 0.8 W at 25 °C. The device has a thermal resistance junction-to-ambient of 195 °C/W and junction-to-case of 30 °C/W. It is hermetically sealed with a kovar base and nickel cap, and complies with MIL-PRF-19500/391 qualification standards. The part is RoHS compliant by design. Packaging dimensions and lead configuration follow standard TO-39 specifications.