Microchip Technology, Inc. Single Bipolar Transistors 2N2907AUBP

PNP silicon transistor in a TO-18 package with 60 V collector-emitter and collector-base voltage ratings, 600 mA collector current, and 0.5 W power dissipation at 25°C. The device is qualified to MIL-PRF-19500/291. Forward current gain ranges from 40 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.6 V at 500 mA. Input and output capacitances are 30 pF and 8 pF respectively. The ceramic lid variant (UBC) is surface mount compatible.