Microchip Technology, Inc. Single Bipolar Transistors 2N2907

The 2N2907 is a PNP silicon transistor in a TO-18 package, qualified per MIL-PRF-19500/291, with a 60 V collector-emitter voltage, 600 mA collector current, and 0.5 W power dissipation at 25°C. Operating and storage temperature ranges from -65°C to +200°C. At IC = 1.0 mA and VCE = 10 V, the forward current transfer ratio (hFE) is 75 to 450. Collector-emitter saturation voltage is 0.4 V at IC = 150 mA and IB = 15 mA, rising to 1.6 V at IC = 500 mA and IB = 50 mA. Base-emitter saturation voltage is 0.6 to 1.3 V at IC = 150 mA and IB = 15 mA. Input capacitance is 30 pF, output capacitance is 8.0 pF. Turn-on time is 45 μs and turn-off time is 300 μs under specified conditions.