Microchip Technology, Inc. Single Bipolar Transistors 2N2604UB

PNP silicon low-power transistor in TO-46 package, rated for a collector-base voltage of 80 Vdc, collector-emitter voltage of 60 Vdc, and collector current of 30 mAdc, with a total power dissipation of 400 mW at 25°C ambient temperature. Operating and storage junction temperature range is -65°C to +200°C. Thermal resistance junction-to-ambient is 275°C/mW. Forward current transfer ratio ranges from 40 to 120 at 10 μA collector current and 5.0 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 10 mA collector and 500 μA base current. Meets MIL-PRF-19500/354 qualification standards. Package has three leads with collector electrically connected to the case.